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VDSM ITAVM ITRMS ITSM VT0 rT
= = = = = =
4200 V 3960 A 6230 A 60000 A 0.95 V 0.13 m
Phase Control Thyristor
5STP 38N4200
Doc. No. 5SYA1012-03 Jan. 02
* * * * *
Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol VDRM, VRRM VRSM1 dV/dtcrit Parameter
Conditions f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125C
5STP 38N4200 5STP 38N4000 5STP 38N3600 4200 V 4600 V 4000 V 4400 V 2000 V/s min typ max 400 400 Unit mA mA 3600 V 4000 V
Characteristic values
Symbol Conditions IDRM IRRM VDRM, Tj = 125C VRRM, Tj = 125C
Forwarde leakage current Reverse leakage current
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 81
typ 90
max 108 50 100
Unit kN m/s m/s Unit kg mm mm
2 2
Parameter Weight Surface creepage distance Air strike distance
Symbol Conditions m DS Da
min 56 22
typ 2.9
max
1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 38N4200
On-state
Maximum rated values
1)
Parameter Max. average on-state current RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions ITAVM ITRMS ITSM I2t ITSM I2t tp = 10 ms, Tj = 125C, VD=VR = 0 V tp = 8.3 ms, Tj = 125C, VD=VR=0 V Half sine wave, Tc = 70C
min
typ
max 3960 6230 60000 18000 65000 17500
Unit A A A kA2s A kA2s Unit V V m mA mA mA mA
Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current
Symbol Conditions VT VT0 rT IH IL IT = 3000 A, Tj= 125C IT = 2500 A - 7500 A, Tj= 125C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
min
typ
max 1.35 0.95 0.13 100 75 500 350
Switching
Maximum rated values
1)
Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current
Symbol Conditions di/dtcrit di/dtcrit Cont. Tj = 125C, ITRM = 5000 A, f = 50 Hz VD 0.67VDRM, Cont. IFG = 2 A, tr = 0.5 s f = 1Hz Tj = 125C, ITRM = 5000 A, VR = 200 V, diT/dt = -5 A/s, VD 0.67VDRM, dvD/dt = 20 V/s,
min
typ
max 250 1000
Unit A/s A/s s
Circuit-commutated turn-off tq time
Characteristic values
600
Parameter Recovery charge Delay time
Symbol Conditions Qrr td Tj = 125C, ITRM = 5000 A, VR = 200 V, diT/dt = -5 A/s VD = 0.4VDRM, IFG = 2 A, tr = 0.5 s
min 5000
typ
max 10000 3
Unit As s
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1012-03 Jan. 02 page 2 of 6
5STP 38N4200
Triggering
Maximum rated values
1)
Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss Average gate power loss
Characteristic values
Symbol Conditions VFGM IFGM VRGM PG PGAV Symbol Conditions VGT IGT VGD IGD Tj = 25C Tj = 25C VD = 0.4 x VDRM, Tvjmax = 125C VD = 0.4 x VDRM, Tvjmax = 125C For DC gate current
min
typ
max 12 10 10 3
Unit V A V W
see Fig. 9 min typ max 2.6 400 0.3 10 Unit V mA V mA
Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current
Thermal
Maximum rated values
1)
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions Tj
min
typ
max 125
Unit C C Unit K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double side cooled Anode side cooled Cathode side cooled Double side cooled Single side cooled
-40 min typ
140 max 5.7 11.4 11.4 1 2
Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h)
Analytical function for transient thermal impedance:
ZthJC(t) = a Ri(1 - e -t/ i )
i =1
i Ri(K/kW) i(s) 1 3.4 0.8685 2 1.26 0.1572 3 0.68 0.0219 4 0.35 0.0078 Fig. 1 Transient thermal impedance junction-to case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1012-03 Jan. 02 page 3 of 6
5STP 38N4200
On-state characteristic model:
VT = A + B iT + C ln(iT +1) + D IT
Valid for iT = 500 - 14000 A A 3.4173e-1 B 9.0000e-5 C 7.6280e-2 D 2.3100e-3
Fig. 2 On-state characteristics. Tj=125C, 10ms half sine
Fig. 3 On-state characteristics.
Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs. mean on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1012-03 Jan. 02 page 4 of 6
5STP 38N4200
Fig. 6 Surge on-state current vs. pulse length. Halfsine wave.
IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/s 1 s 5...20s
Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz.
diG/dt 10 % tr tp (IGM) tp (IGon) t
IGon
Fig. 8 Recommendet gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state current.
Fig. 11 Peak reverse recovery current vs. decay rate of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1012-03 Jan. 02 page 5 of 6
5STP 38N4200
Fig. 12 Device Outline Drawing.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abbsem.com
Doc. No. 5SYA1012-03 Jan. 02

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